Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers

Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion LayersComment: 1 page, submitted to PR

Metallic behavior in Si/SiGe 2D electron systems

We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by screened random charged Coulombic impurity centers. We obtain comprehensive agreement with existing experimental transport data, compellingly establishing that the observed 2D metallic behavior in low-density Si/SiGe systems arises from the peculiar nature of 2D screening of long-range impurity disorder. In particular, our theory correctly predicts the experimentally observed metallic temperature dependence of 2D resistivity in the fully spin-polarized system

Technology utilization in a non-urban region - A measurement of the impact of the Technology Use Studies Center Final report

Technology utilization in agricultural areas and measurement of impact of technology use studies cente

Technology utilization in a non-urban region: Further impact and technique of the Technology Use Studies Center

Updated information pertaining to clients who receive and use information disseminated by the Technology Use Studies Center (TUSC) is reported. Charts are provided which indicate TUSC's performance in information dissemination and technical assistance in terms of quantities of searches accomplished during several contract years. The faculty information service is described, along with details of cooperation with other agencies. Specific searches are listed according to subject, client, and client location, and a measure of client response to services provided is indicated by the included selection of transfer and impact reports. The impetus behind the formation of the general aviation news letter is also described

Technology utilization

Documentation is presented for selected transfer and impact reports provided to the business community, government agencies, and such other requestors as schools, universities, and health services. Statistical data are also included on the characteristics of the TUSC technical searches

Technology utilization data searches

Technology Use Studies Center activities, functions, and services are reported for this period. Transfers and searches are described. Characteristics of TUSC searches are tabulated

Search and dissemination in data processing

Manual retrieval methods were used to complete 54 searches of interest for the General Aviation Newsletter. Subjects of search ranged from television transmission to machine tooling, Apollo moon landings, electronic equipment, and aerodynamics studies

Technology utilization in a non-urban region: Further impact and technique of the Technology Use Studies Center, 2

The clientele served by the Technology Use Studies Center (TUSC) is updated. Manufacturing leads the list of client firms. The standard industrial classification (SIC) range of these firms is broad. Substantial numbers of college and university faculties are using TUSC services. Field operations inherent in the functions of dissemination and assistance are reviewed. Increasing emphasis among clientele is on environmental concerns and management. A record is provided of the institutions contacted and the extent of TUSC involvement with them, as well as TUSC's cooperation with agencies and organizations. The impact of TUSC and the NASA-sponsored Technology Utilization Program on other public agencies is discussed

Spin Precession and Avalanches

In many magnetic materials, spin dynamics at short times are dominated by precessional motion as damping is relatively small. In the limit of no damping and no thermal noise, we show that for a large enough initial instability, an avalanche can transition to an ergodic phase where the state is equivalent to one at finite temperature, often above that for ferromagnetic ordering. This dynamical nucleation phenomenon is analyzed theoretically. For small finite damping the high temperature growth front becomes spread out over a large region. The implications for real materials are discussed.Comment: 4 pages 2 figure

Very high two-dimensional hole gas mobilities in strained silicon germanium

We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to <=13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities